1 rh1009 2.5v reference t j = 25 c sub- sub- symbol parameter conditions notes min typ max group min typ max group units v z reverse breakdown i r = 1ma 2.495 2.505 1 v voltage v z reverse breakdown 400 a i r 10ma 6 1 10 2,3 mv i r voltage change with current r z reverse dynamic i r = 1ma 1 0.6 1 impedance v z temperature stability 1 15 mv v z long term stability t a = 25 c 0.1 c, 20 ppm/khr time i r = 1ma table 1: electrical characteristics (preirradiation) ?5 c t j 125 c reverse breakdown current ................................ 20ma forward current .................................................. 10ma operating temperature range ............. 55 c to 125 c storage temperature range ................. 65 c to 150 c lead temperature (soldering, 10 sec).................. 300 c d u escriptio a u g w a w u w a r b s o lu t exi t i s the rh1009 is a general purpose 2.5v shunt regulator diode designed to operate over a wide current range while maintaining good stability with time and temperature. the adjust terminal allows either temperature coefficient to be minimized or the reference voltage to be adjusted without changing the temperature coefficient. because it operates as a shunt regulator it can be used equally well as a positive or negative reference. the wafer lots are processed to linear technology? in- house class s flow to yield circuits usable in stringent military applications. wu u package / o rder i for atio bur -i circuit u u 2k 20v rh1009 bi nc bottom view adj + h package 3-lead to-46 metal can information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. top view w package 10-lead cerpac 1 5 4 3 2 10 6 7 8 9 nc nc adj v + nc nc nc v nc nc , lt, ltc and ltm are registered trademarks of linear technology corporation. all other trademarks are the property of their respective owners.
2 rh1009 symbol parameter conditions notes min max min max min max min max min max units v z reverse breakdown i r = 1ma 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 2.495 2.505 v voltage v z reverse breakdown voltage 400 a i r 10ma 6 6 8 10 12 mv i z change with current r z reverse dynamic i r = 1ma 1 0.6 0.6 0.8 1.0 1.4 impedance table 1a: electrical characteristics (postirradiation) (note 2) 50krad(si) 20krad(si) 10krad(si) 100krad(si) 200krad(si) note 1: guaranteed by design, characterization or correlation to other tested parameters. note 2: t a = 25 c unless otherwise noted. total dose bias circuit ? linear technology corporation 1990 lt 0607 rev c ?printed in usa i.d. no. 66-10-0174 rev. c 0607 12.4k 15v rh1009 tdbc table 2: electrical test require e ts u w mil-std-883 test requirements subgroup final electrical test requirements (method 5004) 1*,2,3 group a test requirements (method 5005) 1,2,3 group c and d end point electrical parameters 1 (method 5005) * pda applies to subgroup 1. see pda test notes. pda test notes the pda is specified as 5% based on failures from group a, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of mil-std-883 class b. the verified failures of group a, subgroup 1, after burn-in divided by the total number of devices submitted for burn- in in that lot shall be used to determine the percent for the lot. linear technology corporation reserves the right to test to tighter limits than those given. total dose krad (si) 1 reverse breakdown voltage change with current (mv) 0 ? ? ? ? ?0 ?2 ?4 10 100 1000 rh1009 g02 600 a i r 10ma reverse breakdown voltage change with current reverse breakdown voltage total dose krad (si) 1 reverse breakdown voltage (v) 2.502 2.501 2.500 2.499 2.498 10 100 1000 rh1009 g01 i r = 1ma typical perfor m a n ce characteristics uw linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax: (408) 434-0507 www.linear.com
|
